Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 296-300

  Vassilevski, K V ^a   Constantinidis, G ^a   Papanicolaou, N ^b   Martin, N ^a   Zekentes, K ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Al Ti alloy; Annealing; Ohmic contact; P+ 4H SiC; Specific contact resistance

Indexed keywords

ALUMINUM ALLOYS; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; FILM GROWTH; LIQUID PHASE EPITAXY; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VACUUM APPLICATIONS;

VACUUM ANNEALING;

SILICON CARBIDE;

EID: 0039172744     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00521-2     Document Type: Article

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