Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt silicides

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1559-1565

  Lundberg, N ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; THERMODYNAMIC STABILITY; TRANSMISSION LINE THEORY;

COBALT SILICIDE;

OHMIC CONTACTS;

EID: 0030288360     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00071-8     Document Type: Article

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