Titanium and aluminum-titanium ohmic contacts to p-type SiC

Solid-State Electronics

Volumn 41, Issue 11, 1997, Pages 1725-1729

  Crofton, J ^a   Beyer, L ^a   Williams, J R ^c   Luckowski, E D ^c   Mohney, S E ^b   Delucca, J M ^b  

^a MURRAY STATE UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC CONTACTS; ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TECHNOLOGY; TITANIUM;

PLANAR INTERFACE; SMOOTH SURFACE;

SOLID STATE DEVICES;

EID: 0031272866     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00168-8     Document Type: Article

References (11)

1. Suzuki, A., Fujii, Y., Saito, H., Tajima, Y., Furukawa, K. and Nakajima, S., J. Cryst. Growth, 1991, 115, 623.
2. Nakata, T., Koga, K., Matsushita, Y., Ueda, Y. and Niina, T., Amorphous and Crystalline Silicon Carbide II, ed. M. M. Rahman, C. Y.-W. Yang, and G. L. Harris, Springer, Berlin, 1989, p. 26.
3. Crofton, J., Barnes, P. A., Williams, J. R. and Edmond, J. A., Appl. Phys. Lett., 1993, 62(4).
4. Speiß, L., Nennewitz, O. and Pezoldt, J., Silicon Carbide and Related Materials 1995, IOP Publishing Conference Series No. 142, p. 585.
5. Doolittle, L. R., Nuclear Instruments Methods B, 1985, 9, p. 344.
6. CREE Research Inc., Durham, NC 27713.
7. Berger, H. H., Solid State Electron., 1972, 15, 145.
8. Chaddha, A. K., Parsons, J. D. and Kruaval, G. B., Appl. Phys. Lett., 1995, 66, 6, 760.
9. Braslau, N., J Vacuum Sci. Technol., 1981, 19, 803.
10. Bow, J. S., Porter, L. M., Kim, M. J., Carpenter, R. W. and Davis, R. F., Ultramicroscopy, 1993, 52, pp. 289-296.
11. Lundberg, N. and Ostling, M., Solid State Electron., 1996, 39 (11), 1559-1565.