Reliability assessment of Ti/TaSi 2/Pt ohmic contacts on SiC after 1000 h at 600°C

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6553-6559

  Okojie, Robert S ^a   Lukco, Dorothy ^b   Chen, Yuanliang L ^b   Spry, David J ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b QSS GROUP INC   (United States)

^c OHIO AEROSPACE INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELETERIOUS EFFECTS; FAILURE MECHANISM; FIGURE OF MERITS; HIGH TEMPERATURE; METALLIZATIONS; MULTI-LAYER SYSTEM; MULTILAYER STACKS; RELIABILITY ASSESSMENTS; SIC EPILAYERS; SPECIFIC CONTACT RESISTIVITY;

ELECTRIC CONTACTORS; HEAT TREATMENT; MULTILAYERS; OHMIC CONTACTS; PLATINUM; REACTION KINETICS; RELIABILITY ANALYSIS; SILICIDES;

SILICON CARBIDE;

EID: 0037095251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1470255     Document Type: Article

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