Effect of Si or Al interface layers on the properties of Ta and Mo contacts to p-type SiC

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 391-397

  Olowolafe, J O ^a   Liu, J ^a   Gregory, R B ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; INTERFACES (MATERIALS); OHMIC CONTACTS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INTERMETALLIC PHASES;

SILICON CARBIDE;

EID: 0033906005     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0083-7     Document Type: Article

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