Improved Al/Si ohmic contacts to p-type 4H-SiC

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 374-377

  Kakanakov, Roumen ^a   Kassamakova, Liliana ^a   Kassamakov, Ivan ^a   Zekentes, Konstantinos ^b   Kuznetsov, Nikolay ^c  

^a Central Laboratory of Applied Physics Bulgarian Academy of Sciences   (Bulgaria)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c Crystal Growth Research Center   (Russian Federation)

Author keywords

Ohmic contact; p Type SiC; Thermal stability

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; LIQUID PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY; TRANSMISSION LINE THEORY;

TRANSMISSION LINE MODEL;

SILICON CARBIDE;

EID: 0035932315     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00600-0     Document Type: Article

References (10)