Ion-irradiation effect on the Ni/SiC interface reaction

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 255-258

  Roccaforte, F ^a   Calcagno, L ^a   Musumeci, P ^a   La Via, F ^b  

^a INFM   (Italy)

^b CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; ION IMPLANTATION; NICKEL; NICKEL COMPOUNDS; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INTERFACE REACTION; ION IRRADIATION EFFECT; NICKEL SILICIDE;

INTERFACES (MATERIALS);

EID: 4243252467     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.255     Document Type: Article

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