Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 330-334

  Luckowski, E D ^a   Delucca, J M ^b   Williams, J R ^a   Mohney, S E ^b   Bozack, M J ^a   Isaacs Smith, T ^a   Crofton, J ^c  

^a AUBURN UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c MURRAY STATE UNIVERSITY   (United States)

Author keywords

Diffusion barrier; NiCr; Ohmic contacts; SiC; Wire bonding

Indexed keywords

EID: 0011577657     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0410-y     Document Type: Article

References (11)

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