Impact of the device scaling on the low-frequency noise in n-MOSFETs

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 2, 2000, Pages 133-136

  Bu, H M ^a   Shi, Y ^a   Yuan, X L ^a   Zheng, Y D ^a   Gu, S H ^b   Majima, H ^c   Ishikuro, H ^c   Hiramoto, T ^c  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; SIGNAL NOISE MEASUREMENT; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE;

DEVICE SCALING; DRAIN SOURCE VOLTAGE; RANDOM TELEGRAPH SIGNALS;

MOSFET DEVICES;

EID: 0034245614     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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