Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 78, Issue 18, 2001, Pages 2790-2792

  Avellan, Alejandro ^a   Krautschneider, Wolfgang ^a   Schwantes, Stefan ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035971671     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1360779     Document Type: Article

References (13)

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