Impact of polysilicon depletion in thin oxide MOS technology

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1993, Pages 86-90

  Schuegraf, Klaus F ^a   King, C C ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POLYCRYSTALLINE MATERIALS; POLYSILICON; VLSI CIRCUITS;

CONDUCTION CURRENT; DUAL-GATE CMOS; MOS TECHNOLOGY; OXIDE THICKNESS; POLYSILICON DEPLETION; POLYSILICON GATES; PROCESS INTEGRATION; VOLTAGE DROP;

MOSFET DEVICES;

EID: 84968199122     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.1993.263633     Document Type: Conference Paper

References (6)

1. E. Rosenbaum et al. in Int. Svmp. VLSI TSA. p. 214, 1991.
2. T. Kamins, Polycrystalline Silicon for IC Applications, Ch. 5, 1988.
3. C. Lu et al., IEEE Rlec. Dev. Let., p. 192, 1989.
4. H. Wann et al. in Int. Elec. Dev. Mtng.. p. 147, 1992.
5. J. Chen et al., IEEE Elec. Dev. Let.. p. 515, 1987.
6. K. F. Schuegraf et al., Intl. Rel. Phys. Symp.. p. 7, 1993.