3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 91-94

  Ezaki, T ^a   Ikezawa, T ^a   Notsu, A ^a   Tanaka, K ^a   Hane, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Analytical models; Atomic layer deposition; CMOS process; Convergence; Fluctuations; Impurities; Lakes; MOSFET circuits; Predictive models; Silicon

Indexed keywords

ANALYTICAL MODELS; ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; IMPURITIES; LAKES; MOSFET DEVICES; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; SILICON; THRESHOLD VOLTAGE;

CMOS PROCESSS; CONVERGENCE; FLUCTUATIONS; MOSFET CIRCUITS; PREDICTIVE MODELS;

VOLTAGE MEASUREMENT;

EID: 84948767448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034524     Document Type: Conference Paper

References (9)

1. A. Asenov, IEEE Trans. Electron Devices ED-45, 2505 (1998);
2. D. Vasileska et al., Extended Abstracts IWCE-6, 259 (1998);
3. D. J. Frank et al., VLSI Tech. Dig. 169 (1999).
4. K. Tanaka et al., NASECODE-6, 317 (1989);
5. K. Tanaka et al., IEICE Trans. Electronics, E83-C, 1343 (2000).
6. M. Hane et al., IEDM Tech. Dig., 843 (2001).
7. N. Sano et al., IEDM Tech. Dig. 275 (2000).
8. N. D. Arora et al., IEEE Trans. Electron Devices, ED-29, 292 (1982);
9. W. R. Thurber et al., J. Electrochem. Soc., 127, 1807 (1980).