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Volumn , Issue , 1996, Pages 627-630
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The Effect of Statistical Dopant Fluctuations an MOS Device Performance
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPACT MODEL;
DEVICE DESIGN;
DEVICE PERFORMANCE;
DEVICE SIMULATORS;
DOPANT FLUCTUATION;
GROUND PLANES;
MODELING PARAMETERS;
NOVEL DEVICES;
TRANSISTOR MATCHING;
TRANSISTOR MODEL;
MOS DEVICES;
MOSFET DEVICES;
CALCULATIONS;
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
GATES (TRANSISTOR);
OXIDES;
PARAMETER ESTIMATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
COMPACT MODEL;
DRAIN BIAS;
GROUND PLANE CHANNEL PROFILES;
MINIMOS DEVICE SIMULATOR;
MOS TRANSISTOR MATCHING;
OXIDE THICKNESS;
STATISTICAL DOPANT FLUCTUATIONS;
THRESHOLD VOLTAGE;
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EID: 0030396105
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1996.554061 Document Type: Conference Paper |
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Times cited : (55)
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References (10)
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