Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 297-303

  Jallepalli, S ^a,b   Bude, J ^a   Shih, W K ^b   Pinto, M R ^c   Maziar, C M ^a,d   Tasch Jr , A F ^a  

^a IEEE   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c MOTOROLA INC   (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CAPACITANCE; ELECTRONS; MODELS; SEMICONDUCTING SILICON; SIMULATION; TEMPERATURE;

DEEP SUBMICRON; ELECTRON QUANTIZATION; GATE OXIDE THICKNESS; HOLE QUANTIZATION;

MOSFET DEVICES;

EID: 0031078966     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557719     Document Type: Article

References (12)

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