Monte Carlo modeling of threshold variation due to dopant fluctuations

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 169-170

  Frank, David J ^a   Taur, Yuan ^a   Ieong, Meikei ^a   Wong, Hon Sum P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FINITE ELEMENT METHOD; MONTE CARLO METHODS; MOSFET DEVICES; PROBABILITY; RANDOM PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

DOPANT FLUCTUATION EFFECT; DRAIN; SOURCE;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033281305     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)