Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in the depletion layer

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4326-4334

  Slavcheva, G ^a   Davies, J H ^a   Brown, A R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; CORRELATION FUNCTION; CORRELATION LENGTHS; CRITICAL REGION; DEEP SUBMICRON DEVICE; DEPLETION LAYER; IONIZED IMPURITIES; LENGTH SCALE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; POTENTIAL FLUCTUATIONS; RANDOM IMPURITIES; RANDOM POSITION; RANDOM POTENTIALS; SILICON-OXIDE INTERFACES; SINGLE LAYER; STANDARD DEVIATION; TOTAL STANDARD DEVIATION;

SILICON OXIDES; STATISTICS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0036536196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1450031     Document Type: Article

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