Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxide

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 805-812

  Asenov, Asen ^a   Saini, Subhash ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GRAIN BOUNDARIES; RANDOM PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THRESHOLD VOLTAGE;

RANDOM DOPANT INDUCED THRESHOLD VOLTAGE FLUCTUATIONS; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0033872616     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830997     Document Type: Article

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