THRESHOLD VOLTAGE DEVIATION IN VERY SMALL MOS TRANSISTORS DUE TO LOCAL IMPURITY FLUCTUATIONS.

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1982, Pages 46-47

  Hagiwara, Takaaki ^a   Yamaguchi, Ken ^a   Asai, Shojiro ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION PROCESS; DIGEST OF PAPER; ION IMPLANTATION PROCESS; LOCAL IMPURITY CONCENTRATION STATISTICAL FLUCTUATION; LOWERING APPLIED VOLTAGES; MOS TRANSISTOR MINIATURIZATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020240615     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)