RTS amplitudes in decananometer MOSFETs: 3-D simulation study

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 839-845

  Asenov, Asen ^a   Balasubramaniam, Ramesh ^a   Brown, Andrew R ^a   Davies, John H ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Degradation; MOSFET; Numerical simulation; Random dopants; RTS; Trapping

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; TELEGRAPH; THREE DIMENSIONAL;

DENSITY GRADIENT CORRECTIONS; RANDOM TELEGRAPH SIGNALS;

MOSFET DEVICES;

EID: 0037560876     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.811418     Document Type: Article

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