Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1254-1260

  Asenov, Asen ^a   Kaya, Savas ^b   Brown, Andrew R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Ohio University   (United States)

Author keywords

Intrinsic parameter fluctuation; Line edge roughness (LER); MOSFETs; Numerical simulation; Random discrete dopants

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CORRELATION METHODS; GATES (TRANSISTOR); STATISTICAL METHODS; SURFACE ROUGHNESS;

DECANANOMETER; FOURIER SYNTHESIS; GATE LINE EDGE ROUGHNESS; INTRINSIC PARAMETER FLUCTUATIONS; RANDOM DISCRETE DOPANTS;

MOSFET DEVICES;

EID: 0042532317     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813457     Document Type: Article

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