Device modeling of statistical dopant fluctuations in MOS transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 153-156

  Stolk, P A ^a   Widdershoven, F P ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

STANDARD DEVIATION; STATISTICAL DOPANT FLUCTUATIONS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030715147     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)