Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 722-729

  Asenov, Asen ^a,b   Slavcheva, Gabriela ^b   Brown, Andrew R ^b   Davies, John H ^b   Saini, Subhash ^c  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c NASA AMES RESEARCH CENTER   (United States)

Author keywords

3 D; Dopant fluctuation; MOSFETs; Numerical simulation; Quantum effects; Threshold

Indexed keywords

DENSITY GRADIENT (DG); ULTRATHIN GATE OXIDES;

COMPUTER SIMULATION; GATES (TRANSISTOR); GRADIENT METHODS; OXIDES; QUANTUM THEORY; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0035307248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915703     Document Type: Article

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