Integrated atomistic process and device simulation of decananometre MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 87-90

  Asenov, A ^a   Jaraiz, M ^b   Roy, S ^a   Roy, G ^a   Adamu Lema, F ^a   Brown, A R ^a   Moroz, V ^c   Gafiteanu, R ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c SYNOPSYS INC   (United States)

Author keywords

Analytical models; Atomic layer deposition; Atomic measurements; Fluctuations; Kinetic theory; Monte Carlo methods; MOSFETs; Semiconductor process modeling; Silicon; Stochastic processes

Indexed keywords

ANALYTICAL MODELS; ATOMIC LAYER DEPOSITION; KINETIC THEORY; MONTE CARLO METHODS; RANDOM PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON; STOCHASTIC MODELS; STOCHASTIC SYSTEMS;

ATOMIC MEASUREMENTS; ATOMISTIC PROCESS SIMULATION; ATOMISTIC SIMULATOR; FLUCTUATIONS; KINETIC MONTE CARLO; MOSFETS; PROCESS SIMULATORS; SEMICONDUCTOR PROCESS MODELING;

MOSFET DEVICES;

EID: 84948782220     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034523     Document Type: Conference Paper

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