Resolution limiting mechanism in electron beam lithography

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 90-91

  Yoshizawa, M ^a   Moriya, S ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; IMAGE ANALYSIS; IMAGE QUALITY; THRESHOLD VOLTAGE;

RESOLUTION LIMITING MECHANISMS;

LSI CIRCUITS;

EID: 0033640381     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000144     Document Type: Article

References (2)

1. CUI, Z., GERARDINO, A., GENTILI, M., DIFABRIZIO, E., and PREWETT, P.D.: 'Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography', J. Vac. Sci. and Technol. B, 1998, 16, (6), pp. 3284-3288
2. FOURIE, J.T.: 'Electric effects in contamination and electron beam etching', Scanning Electron Microsc., 1981, 1, pp. 127-134