Modeling line edge roughness effects in sub 100 nanometer gate length devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 131-134

  Oldiges, Phil ^a   Lin, Qinghuang ^a   Petrillo, Karen ^a   Sanchez, Martha ^a   Ieong, Meikei ^a   Hargrove, Mike ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; MATHEMATICAL MODELS; MONTE CARLO METHODS; STATISTICAL METHODS; SURFACE ROUGHNESS;

LINE EDGE ROUGHNESS; NANOMETER GATE LENGTH DEVICES;

MOSFET DEVICES;

EID: 0033714120     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)