Hierarchical approach to "atomistic" 3-D MOSFET simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 18, Issue 11, 1999, Pages 1558-1565

  Asenov, Asen ^a,b   Brown, Andrew R ^a,b   Davies, John H ^a,b   Saini, Subhash ^a,b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Deep submicron; Device models; Modeling; Simulation; Very large scale integration (vlsi)

Indexed keywords

DRIFT-DIFFUSION ATOMISTIC SIMULATION; NONLINEAR POISSON EQUATION;

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; NONLINEAR EQUATIONS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE; VLSI CIRCUITS;

MOSFET DEVICES;

EID: 0033312006     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.806802     Document Type: Article

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