Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 259-264

  Koh, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; LEAKAGE CURRENTS; THICKNESS CONTROL; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

THICKNESS SCALING;

MOSFET DEVICES;

EID: 0035250093     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902724     Document Type: Article

References (18)

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