Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 135-138

  Asenov, A ^a   Kaya, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; CORRELATION METHODS; DENSITY (SPECIFIC GRAVITY); ELECTRIC NETWORK SYNTHESIS; GATES (TRANSISTOR); INTERFACES (MATERIALS); QUANTUM THEORY; SEMICONDUCTING FILMS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

AUTO-CORRELATION FUNCTIONS; QUANTUM MECHANICAL EFFECTS;

MOSFET DEVICES;

EID: 0033711579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)