On the correlation between surface roughness and inversion layer mobility in Si-MOSFET's

IEEE Electron Device Letters

Volumn 21, Issue 1, 2000, Pages 34-36

  Pirovano, A ^a   Lacaita, A L ^a   Ghidini, G ^b   Tallarida, G ^c  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; SURFACE ROUGHNESS;

INVERSION LAYER MOBILITY;

MOSFET DEVICES;

EID: 0033895145     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817444     Document Type: Article

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