Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 259-262

  Vasileska, Dragica ^a   Gross, William J ^a,b   Ferry, David K ^a  

^a Arizona State University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; IONIC CONDUCTION; THRESHOLD VOLTAGE;

DEEP SUBMICROMETER; DOUBLE COUNTING; GATE CAPACITANCE; GATE LENGTH; INTERACTION TERM; RANDOM IMPURITIES; SUBTHRESHOLD CHARACTERISTICS; THRESHOLD VOLTAGE SHIFTS;

MOSFET DEVICES;

EID: 85031637284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742760     Document Type: Conference Paper

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