Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 585-588

  Cassan, E ^a   Dollfus, P ^a   Galdin, S ^a   Hesto, P ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC INSULATORS; GATES (TRANSISTOR); HETEROJUNCTIONS; MONTE CARLO METHODS; PERMITTIVITY;

DIRECT TUNNELING GATE CURRENTS;

MOSFET DEVICES;

EID: 0033751152     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00265-6     Document Type: Article

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