3D modelling of fluctuation effects in highly scaled VLSI devices

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 103-109

  Linton Jr , Thomas D ^a   Yu, Shaofeng ^a   Shaheed, Reaz ^a  

^a INTEL CORPORATION   (United States)

Author keywords

3D; Device simulation; Fluctuation; MOSFET

Indexed keywords

COMPUTER SIMULATION; MASKS; MOSFET DEVICES; PHOTOLITHOGRAPHY; POLYSILICON; SEMICONDUCTOR DOPING;

FLUCTUATION EFFECTS;

VLSI CIRCUITS;

EID: 0035695567     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/43502     Document Type: Conference Paper

References (7)

1. The impact of line edge roughness on 100nm device performance
2. Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics
3. Three-dimensional 'Atomistic' simulation of discrete random dopant distribution effects in sub-0.1 um MOSFET's
4. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 um MOSFET's: A 3-D 'atomistic' simulation study
5. Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation
6. Alpha particle-induced soft errors in dynamic memories
7. Modeling the cosmic-ray-induced soft-error rate in integrated circuits - An overview