Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

IEEE Transactions on Nanotechnology

Volumn 1, Issue 4, 2002, Pages 195-200

  Brown, Andrew R ^a   Asenov, Asen ^a,b,c,d   Watling, Jeremy R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Department of Device Modeling ^*  (United Kingdom)

^c Device Modeling Group   (United Kingdom)

^d New Atomistic and Device Simulation Centre   (United Kingdom)

Author keywords

Charge carrier processes; Lithography; MOSFETS; Semiconductor device doping; Semiconductor device modeling; Stochastic processes

Indexed keywords

LONG-CHANNEL MOBILITY; SEMICONDUCTOR DEVICE DOPING; SEMICONDUCTOR DEVICE MODELING;

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON TUNNELING; QUANTUM THEORY; RANDOM PROCESSES; SEMICONDUCTOR DEVICES;

MOSFET DEVICES;

EID: 0041537563     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.807392     Document Type: Conference Paper

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