Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 112-119

  Asenov, Asen ^a,b   Kaya, Savas ^b,c   Davies, John H ^b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c Ohio University   (United States)

Author keywords

3 D threshold; MOSFETs; Numerical simulation; Oxide thickness fluctuation; Quantum effects

Indexed keywords

AUTOCORRELATION FUNCTION; DEEP SUBMICROMETER; OXIDE THICKNESS VARIATIONS; QUANTUM MECHANICAL EFFECTS; RANDOM DISCRETE DOPANTS; THRESHOLD VOLTAGE FLUCTUATIONS;

COMPUTER SIMULATION; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTOR DEVICE MODELS; SILICA; STATISTICAL METHODS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0036247929     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974757     Document Type: Article

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