Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 911-916

  Yamakawa, Shinya ^a   Ueno, Hiroaki ^a   Taniguchi, Kenji ^a   Hamaguchi, Chihiro ^a   Miyatsuji, Kazuo ^b   Masaki, Kazuo ^c   Ravaioli, Umberto ^d  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c ANAN NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348239733     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360871     Document Type: Article

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