Performance fluctuations of 0.10 μm MOSFETs - limitation of 0.1 μm ULSIs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 13-14

  Mizuno, T ^a   Iwase, M ^a   Niiyama, H ^a   Shibata, T ^a   Fujisaki, K ^a   Nakasugi, T ^a   Toriumi, A ^a   Ushiku, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; PERFORMANCE; THICKNESS MEASUREMENT; ULSI CIRCUITS;

CHANNEL DOPANT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0028562790     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)