Growth and characterization of ultrathin nitrided silicon oxide films

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 265-286

  Gusev, E P ^a   Lu, H C ^a   Garfunkel, E L ^a   Gustafsson, T ^a   Green, M L ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FILM GROWTH; GATES (TRANSISTOR); MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS;

GATE DIELECTRIC APPLICATIONS; NITRIDATION; OXYNITRIDE FILMS; THERMAL OXYNITRIDATION;

ULTRATHIN FILMS;

EID: 0032683840     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0265     Document Type: Article

References (158)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, Sun Jose, CA, 1997.
2. P. Balk, "Dielectrics for Field Effect Technology," Adv. Mater. 7, 703 (1995).
3. T. Hori, Gate Dielectrics and MOS ULSI, Springer, Berlin, 1997.
4. L. Feldman, E. P. Gusev, and E. Garfunkel, "Ultrathin Dielectrics in Si Microelectronics - An Overview," Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. P. Gusev, and A. Y. Vul', Eds., Kluwer Academic Publishers, Dordrecht, Netherlands. 1998, p. 1.
5. M. T. Bohr, "Technology Development Strategies for the 21st Century," Appl. Surf. Sci. 100/101, 534 (1996).
6. Y. Taur, D. Buchanan, W. Chen, D. J. Frank, K. I. Ismail, S.-H. Lo, G. A. Sai-Halasz, R. G. Viswanathan, H.-J. C. Wann, S. J. Wind, and H.-S. Wong, "CMOS Scaling into the Nanometer Regime," Proc. IEEE 85, 486 (1997).
7. D. A. Buchanan and S. H. Lo, "Reliability and Integration of Ultrathin Gate Dielectrics for Advanced CMOS," Microelectron. Eng. 36, 13 (1997).
8. 2O," Appl. Phys. Lett. 57, 1010 (1990).
9. 2O Ambient," Jpn. J. Appl. Phys. 29, L2333 (1990).
10. T. Hori, S. Akamatsu, and Y. Odake, "Deep-Submicrometer Technology with Reoxidized or Annealed Nitrided-Oxide Gate Dielectrics Prepared by Rapid Thermal Processing," IEEE Trans. Electron Devices 39, 118 (1992).
11. T. Hori, "Nitrided Gate Oxide CMOS Technology for Improved Hot-Carrier Reliability." Microelectron. Eng. 22, 245 (1993).
12. 2O," Appl. Phys. Lett. 63, 54 (1993).
13. H. T. Tang, W. N. Lennard, M. Zinke-Allmang, I. V. Mitchell, L. C. Feldman, M. L. Green, and D. Brasen, "Nitrogen Content of Oxynitride Films on Si(100)," Appl. Phys. Lett. 64, 64 (1994).
14. 2," Appl. Phys. Lett. 66, 1225 (1995).
15. D. Landheer, Y. Tao, D. X. Xu, G. I. Sproule, and D. A. Buchanan, "Defects Generated by Fowler-Nordheim Injection in Silicon Dioxide Films Produced by Plasma-Enhanced Chemical-Vapour Deposition with Nitrous Oxide and Silane," J. Appl. Phys. 78, 1818 (1995).
16. S. V. Hattangady, H. Niimi, and G. Lucovsky, "Controlled Nitrogen Incorporation at the Gate Oxide Surface," Appl. Phys. Lett. 66, 3495 (1995).
17. 2O Nitrided Oxides," J Appl. Phys. 79, 1583 (1996).
18. W. L. Hill, E. M. Vogel, V. Misra, P. K. McLarty, and J. J. Wortman, "Low Pressure Rapid Thermal CVD of Oxynitride Gate Dielectrics for N-Channel and P-Channel MOSFET's," IEEE Trans. Electron Devices 43, 15 (1996).
19. G. Lucovsky, "Spatially-Selective Incorporation of Bonded-Nitrogen into Ultrathin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing," Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. P. Gusev, and A. Y. Vul', Eds., Kluwer Academic Publishers, Dordrecht, Netherlands, 1998, p. 147.
20. 2O-Oxynitridation," Advances in Rapid Thermal and Integrated Processing, F. Roozeboom, Ed., Kluwer Academic Publishers, Dordrecht, Netherlands, 1995, p. 193.
21. H. B. Harrison, H. F. Li, S. Dimitrijev, and P. Tanner, "Nitrogen in Ultrathin Dielectrics," Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. P. Gusev, and A. Y. Vul', Eds., Kluwer Academic Publishers, Dordrecht, Netherlands, 1998, p. 191.
22. M. Alessandri, C. Clementi, B. Crivelli, G. Ghidini, F. Pellizzer, F. Martin, M. Imai, and H. Ikegawa, "Nitridation Impact on Thin Oxide Charge Trapping," Microelectron. Eng. 36, 211 (1997).
23. 2O-Oxynitridation Effects on Breakdown of Thermal Oxides," IEICE Trans. Electron. E78-C, 248 (1995).
24. 2O-Oxynitrided Gate Oxide NMOSFETs," IEEE Trans. Electron Devices 43, 1364 (1996).
25. E. Cartier, D. A. Buchanan, and G. J. Dunn, "Atomic Hydrogen-Induced Interface Degradation of Reoxidized-Nitrided Silicon Dioxide on Silicon," Appl. Phys. Lett. 64, 901 (1994).
26. z Films on Si," J. Electrochem. Soc. 115, 311 (1968).
27. V. A. Gritsenko, Structure and Electronic Properties of Amorphous Insulators in Silicon MIS Structures, Science, Novosibirsk, Russia, 1993.
28. D. Wristers, L. K. Han, T. Chen, H. H. Wang, and D. L. Kwong, "Degradation of Oxynitride Gate Dielectric Reliability Due to Boron Diffusion," Appl. Phys. Lett. 68, 2094 (1996).
29. M. L. Green, D. Brasen, L. Feldman, E. Garfunkel, E. P. Gusev, T. Gustafsson, W. N. Lennard, H. C. Lu, and T. Sorsch, "Thermal Routes to Ultrathin Oxynitrides," Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. P. Gusev, and A. Y. Vul', Eds., Kluwer Academic Publishers, Dordrecht, Netherlands, 1998, p. 181.
30. D. Bouvet, P. A. Clivaz, M. Dutoit, C. Coluzza, J. Almeida, G. Margaritondo, and F. Pio, "Influence of Nitrogen Profile on Electrical Characteristics of Furnaceor Rapid Thermally Nitrided Silicon Dioxide Films," J. Appl. Phys. 79, 7114 (1996).
31. Z. Q. Yao, H. B. Harrison, S. Dimitrijev, and Y. T. Yeow, "Effects of Nitric Oxide Annealing of Thermally Grown Silicon Dioxide Characteristic," IEEE Electron Device Lett. 16, 345 (1995).
32. 2O Oxides," Appl. Phys. Lett. 67, 1600 (1995).
33. 2O Between 800 and 1200°C: Incorporated Nitrogen and Roughness," Appl. Phys. Lett. 65, 848 (1994).
34. R. I. Hedge, P. J. Tobin, K. G. Reid, B. Maiti, and S. A. Ajuria, "Growth and Surface Chemistry of Oxynitride Gate Dielectric Using Nitric Oxide," Appl. Phys. Lett. 66, 2882 (1995).
35. 2O Oxynitridation on the Oxide/Si(100) Interface Structure," Appl. Phys. Lett. 67, 2836 (1995).
36. D. G. J. Sutherland, H. Akatsu, M. Copel, F. J. Himpsel, T. Callcott, J. A. Carlisle, D. Ederer, J. J. Jia, I. Jimenez, R. Perera, D. K. Shuh, L. J. Terminello, and W. M. Tong, "Stoichiometry Reversal in the Growth of Thin Oxynitride Films on Si(100) Surfaces," J. Appl. Phys. 78, 6761 (1995).
37. Z. Q. Yao, "The Nature and Distribution of Nitrogen in Silicon Oxynitride Grown on Si in a Nitric Oxide Ambient," J. Appl. Phys. 78, 2906 (1995).
38. 2O Using Isotopic Tracing Methods," Appl. Phys. Lett. 68, 2366 (1996).
39. M. Copel, R. M. Tromp, H. J. Timme, K. Penner, and T. Nakao, "Effects of Surface Oxide on Rapid Thermal Nitridation of Si(100)," J. Vac. Sci. Technol. A 14, 462 (1996).
40. F. H. P. M. Habraken and A. E. T. Kuiper, "Silicon Nitride and Oxynitride Films," Mater. Sci. Eng. Rep. R12, 123 (1994).
41. S. V. Hattangady, H. Niimi, and G. Lucovsky, "Integrated Processing of Silicon Oxynitride Films by Combined Plasma and Rapid-Thermal Processing," J. Vac. Sci. Technol. A 14, 3017 (1996).
42. E. P. Gusev, H. C. Lu, T. Gustafsson, E. Garfunkel, M. L. Green, and D. Brasen, "The Composition of Ultrathin Oxynitrides Thermally Grown in NO," J. Appl. Phys. 82, 896 (1997).
43. T. P. Ma, "Gate Dielectric Properties of Silicon Nitride Films Formed by Jet Vapor Deposition," Appl. Surf. Sci. 117/118, 259 (1997).
44. H. Goto, K. Shibahara, and S. Yokoyama, "Atomic Layer Controlled Deposition of Silicon Nitride with Self-Limiting Mechanism," Appl. Phys. Lett. 68, 3257 (1996).
45. W. DeCoster, B. Brijs, H. Bender, J. Alay, and W. Vandervorst, "RBS, AES, and XPS Analysis of Ion Beam Induced Nitridation of Si and SiGe Alloys," Vacuum 45, 389 (1994).
46. l-x Alloys: The Role of Ion Energy, Ion Dose and Substrate Temperature," Nucl. Instr. Meth. B 67, 301 (1992).
47. R. Hezel and N. Lieske, "Room Temperature Formation of Si-Nitride Films by Low Energy Ion Implantation into Silicon," J. Electrochem. Soc. 129, 379 (1982).
48. H. Kobayashi, T. Mizokuro, Y. Nakato, K. Yoneda, and Y. Todokoro. "Nitridation of Silicon Oxide Layers by Nitrogen Plasma Generated by Low Energy Electron Impact," Appl. Phys. Lett. 71, 1978 (1997).
49. R. Kraft, T. P. Schneider, W. W. Dostalik, and S. Hattangady, "Surface Nitridation of Silicon Dioxide with a High Density Nitrogen Plasma," J. Vac. Sci. Technol. B 15, 967 (1997).
50. 2 Ion Beams," Appl. Surf. Sci. 115, 166 (1997).
51. 2 Reactions with Si(100)," Surf. Sci. 283, 73 (1993).
52. Z.-M. Ren, Z.-F. Ying, X.-X. Xiong, M.-Q. He, F.-M. Li, Y.-C. Du, and L.-Y. Cheng, "Study of the Growth of Thin Nitride Films Under Low-Energy Nitrogen-Ion Bombardment," Appl. Phys. A 58, 395 (1994).
53. A. G. Schrott and S. C. Fain, "Nitridation of Si(111) by Nitrogen Atoms," Surf. Sci. 111, 39 (1981).
54. A. G. Schrott, Q. X. Su, and S. C. Fain, "Reaction of Si(IOO) Single Crystals with Nitrogen Atoms," Surf. Sci. 123, 223 (1982).
55. J. A. Taylor, G. M. Lancaster, A. Ignatiev, and J. W. Rabalais, "Interaction of Ion Beams with Surfaces. Reaction of Nitrogen with Silicon and Its Oxides," J. Chem. Phys. 68, 1776 (1978).
56. 2 Interfaces by 900°C Rapid Thermal Annealing," Microelectron. Eng. 36, 207 (1997).
57. M. Hillert, S. Jonsson, and B. Sundman, "Thermodynamic Calculation of the Si-N-O System," Z. Metallkd. 83, 648 (1992).
58. 4," J. Electrochem. Soc. 136, 3210 (1989).
59. 2O," Appl. Phys. Lett. 70, 2007 (1997).
60. 2O: The Role of Atomic Oxygen," Appl. Phys. Lett. 66, 1492 (1995).
61. 2O," Appl. Phys. Lett. 68, 1696 (1996).
62. H. C. Lu, E. P. Gusev, T. Gustafsson, M. L. Green, D. Brasen, and E. Garfunkel, "Compositional and Mechanistic Aspects of Ultrathin Oxynitride Film Growth on Si(100)," Microelectron. Eng. 36, 29 (1997).
63. H. C. Lu, E. P. Gusev, T. Gustafsson, and E. Garfunkel, "The Effect of Near-Interfacial Nitrogen on the Oxidation Behavior of Ultrathin Silicon Oxynitrides," J. Appl. Phys. 81, 6992 (1997).
64. 2 System: Its Microstructure and Imperfections," Rep. Prog. Phys. 57, 791 (1994).
65. E. Irene, "Models for the Oxidation of Silicon," CRC Crit. Rev. Solid State Mater. Sci. 14, 175 (1988).
66. E. H. Poindexter, "MOS Interface States: Overview and Physicochemical Perspective," Semicond. Sci. Technol. 4, 961 (1989).
67. C. J. Sofield and A. M. Stoneham, "Oxidation of Silicon: The VLSI Gate Dielectric?" Semicond. Sci. Technol. 10, 215 (1995).
68. 2/Si Interface," CRC Crit. Rev. Solid State Mater. Sci. 20, 339 (1995).
69. T. Engel, "The Interaction of Molecular and Atomic Oxygen with Si(100) and Si(111)," Surf. Sci. Rep. 18, 91 (1993).
70. 2 Interface, C. R. Helms and B. E. Deal, Eds., Plenum Press, New York, 1988, p. 5.
71. 2 Interface - 3, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 214.
72. M. Navi and S. T. Dunham, "Investigation of Boron Penetration Through Thin Gate Dielectrics Including Role of Nitrogen and Fluorine," J. Electrochem. Soc. 145, 2545 (1998).
73. 2 Thin Films Using SIMS," Appl Surf. Sci. 104/105, 379 (1996).
74. H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, and L. C. Feldman, "High Resolution Ion Scattering Study of Silicon Oxynitridalion," Appl. Phys. Lett. 69, 2713 (1996).
75. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, "Silicon Oxidation and Oxynitridation in the Ultrathin Regime: Ion Scattering Studies," Brazil. J. Phys. 27, 302 (1997).
76. E. Garfunkel, E. P. Gusev, H. C. Lu, T. Gustafsson, and M. L. Green, "Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation," Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. P. Gusev, and A. Y. Vul', Eds., Kluwer Academic Publishers, Dordrecht, Netherlands, 1998, p. 39.
77. J. F. van der Veen, "Ion Beam Crystallography of Surfaces and Interfaces," Surf. Sci. Rep. 5, 199 (1985).
78. E. P. Gusev, K. Morino, M. Hirose, and M. L. Green, "High Resolution Photoemission Study of Ultrathin Oxynitride Film," Proceedings of the American Vacuum Society Annual Meeting, San Jose, CA, 1997.
79. A. Gupta, S. Toby, E. P. Gusev, H. C. Lu, Y. Li, M. L. Green, T. Gustafsson, and E. Garfunkel, "Nitrous Oxide Gas Phase Chemistry During Silicon Oxynitride Growth," Progr. Surf. Sci. 59, 103 (1998).
80. 2 at T = 760-1050°C," Appl. Phys. Lett. 71, 2978 (1997).
81. 2/NO Process," J. Appl. Phys. 84, 2980 (1998).
82. S. Dimitrijev, D. Sweatman, and H. B. Harrison, "Model for Dielectric Growth on Silicon in a Nitrous Oxide Environment," Appl. Phys. Lett. 62, 1539 (1993).
83. B. Doyle, H. R. Soleimani, and A. Philipossian, "Simultaneous Growth of Different Thickness Gate Oxides in Silicon CMOS Processing," IEEE Electron Device Lett. 16, 301 (1995).
84. C. T. Liu, E. J. Lloyd, Y. Ma, M. Du, R. L. Opila, and S. J. Hillenius, "High Performance 0.2 μm CMOS with 25 Å Gate Oxide Grown on Nitrogen Implanted Silicon," Technical Digest International Electron Devices Meeting. 1996, p. 499.
85. 2O," Appl. Phys. Lett. 67, 500 (1995).
86. 2O," Appl. Phys. Lett. 61, 1031 (1992).
87. 2 Interface," Appl. Phys. Lett. 27, 150 (1975).
88. 2O," J. Appl. Phys. 70, 1072 (1991).
89. 2O," J. Appl. Phys. 75, 1811 (1994).
90. 2O," J. Appl. Phys. 79, 1464 (1996).
91. R. B. Fair, "Physical Models of Boron Diffusion in Ultrathin Gate Oxides," J. Electrochem. Soc. 144, 708 (1997).
92. K. A. Ellis and R. A. Buhrman, "Boron Diffusion in Silicon Oxides and Oxynitrides," J Electrochem. Soc. 145, 2068 (1997).
93. 2O Oxidation of Silicon on Point Defect Injection Kinetics in the High Temperature Regime," Appl. Phys. Lett. 69, 2725 (1996).
94. 2 Interface - 3, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 172.
95. J. A. Aboaf, "Formation of 20-25 Å Thermal Oxide Films on Silicon at 950-1140°C," J. Electrochem. Soc. 118, 1370 (1971).
96. 2 with Ammonia," J. Electrochem. Soc. 143, 2938 (1996).
97. 2O," Appl. Phys. Lett. 69, 2385 (1996).
98. 2 Interface," J. Vac. Sci. Technol 16, 345 (1979).
99. 2O Oxynitride on Si(100)." J. Vac. Sci. Technol. B 14, 2882 (1996).
100. 2 Interfaces: Relation Between N1s Core-Level Shifts and Microscopic Structure," Phys. Rev. Lett. 79, 5174 (1997).
101. 2 on Si After RIE-like Nitrogen Plasma Action," Appl. Surf. Sci. 120, 306 (1997).
102. 2O," Jpn. J. Appl. Phys. 34, 2370 (1995).
103. E. A. Irene, O. Liu, W. M. Paulson, P. J. Tobin, and R. I. Hedge, "Measurements of Nitrogen in Nitrided Oxides Using Spectroscopic Immersion Ellipsometry," J. Vac. Sci. Technol. B 14, 1697 (1996).
104. 18 and RTP." Appl. Surf. Sci. 65/66, 647 (1993).
105. 2 Films in Ammonia: The Role of Hydrogen." J. Electrochem. Soc. 143, 1426 (1996).
106. 2 Films upon Thermal Annealing," Appl. Phys. Lett. 72, 450 (1998).
107. R. M. Tromp, M. Copel, M. C. Reuter, M. Horn von Hoegen, J. Speidell, and R. Koudijs, "A New 2-D Particle Detector for a Toroidal Electrostatic Analyser," Rev. Sci. Instrum. 62, 2679 (1991).
108. H. C. Lu. E. P. Gusev, E. Garfunkel, and T. Gustafsson, "An Ion Scattering Study of the Interaction of Oxygen with Si(111): Surface Roughening and Oxide Growth," Surf. Sci. 341, 111 (1996).
109. 2(111) Surface," Phys. Rev. Lett. 67, 1134 (1991).
110. F. Besenbacher, J. U. Andersen, and E. Bonderup, "Straggling in Energy Loss of Energetic Hydrogen and Helium Ions," Nucl. Instr. Mclh. 168, 1 (1980)."
111. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, "The Growth Mechanism of Thin Silicon Oxide Films on Si(100) Studied by Medium Energy Ion Scattering," Phys. Rev. B 52, 1759 (1995).
112. H. C. Lu, T. Gustafsson, E. P. Gusev, and E. Garfunkel, "An Isotopic Labeling Study of the Growth of Thin Oxide Films on Si(100)," Appl. Phys. Lett. 67, 1742 (1995).
113. M. Copel and R. M. Tromp, "Hydrogen Coverage Dependence of Si(100) Homoepitaxy," Phys. Rev. Lett. 72, 1236 (1994).
114. M. Copel and R. M. Tromp, "Elastic Recoil Detection for MEIS," Rev. Sci. Instrum. 64, 3147 (1993).
115. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, "On the Mechanism of Ultrathin Silicon Oxide Film Growth During Thermal Oxidation," Interface Control of Electrical, Chemical, and Mechanical Properties, S. P. Murarka, K. Rose. T. Ohmi, and T. Seidel, Eds., MRS Vol. 318, 1994, p. 69.
116. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, "Initial Oxidation of Silicon: New Ion Scattering Results in the Ultrathin Regime," Appl. Surf. Sci. 104/105, 329 (1996).
117. 2 Interface - 3, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 49.
118. 2-Si Interfacial Regions: Ultrathin Oxide Films," IBM J. Res. Develop. 22, 294 (1978).
119. 2/Si Interface," Mater. Sci. Rep. 1, 65 (1986).
120. F. G. Himpsel, "Electronic Structure of Semiconductor Interfaces," Surf. Sci. 299/300, 525 (1994).
121. 2 Interface," Appl. Phys. Lett. 65, 1097 (1994).
122. 2O Plasma Anodization of Silicon and N, Plasma Nitridation of Silicon Oxides," Appl. Phys. Lett. 69, 1053 (1996).
123. 2 Film Thickness Metrology by X-Ray Photoelectron Spectroscopy," Appl. Phys. Lett. 71, 2764 (1997).
124. 2/Si Interface," Phys. Rev. B 38, 6084 (1988).
125. J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell, and O. A. Aktsipetrov, "Optical Second-Harmonic Electroreflectance Spectroscopy of a Si(001) Metal-Oxide-Semiconductor Structure," Phys. Rev. B 53, R7607 (1996).
126. 4 Interfaces Studied by Optical Second-Harmonic Spectroscopy," Phys. Rev. Lett. 74, 3001 (1995).
127. Y. Okada, P. J. Tobin, and S. A. Ajuria, "Furnace Grown Silicon Oxynitrides Using NO," IEEE Trans. Electron Devices 41, 1608 (1994).
128. 2O," Appl. Phys. Lett. 67, 374 (1995).
129. M. D. Wiggins, R. J. Baird, and P. Wynblatt, "Thermal Nitridation of Si(111) by Nitric Oxide," J. Vac. Sci. Technol. 18, 965 (1981).
130. 4: Updates and Additions," J. Electrochem. Soc. 142, 2508 (1995).
131. B. E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," J. Appl. Phys. 36, 3770 (1965).
132. F. Rochet, S. Rigo, M. Froment, C. d'Anterroches, C. Maillot, H. Roulet, and G. Dufour, "The Thermal Oxidation of Silicon: The Special Case of the Growth of Very Thin Films," Adv. Phys. 35, 339 (1986).
133. 18O Isotopic Labeling to Study Thermal Dry Oxidation of Silicon as a Function of Temperature and Pressure," Appl. Surf. Sci. 39, 65 (1989).
134. N. F. Mott, S. Rigo, F. Rochet, and A. M. Stoneham, "Oxidation of Silicon," Phil. Mag. B 60, 189 (1989).
135. 2O Oxynitride Process," J. Electrochem. Soc. 143, 1753 (1996).
136. 2O by UV-Radiation," Jpn. J. Appl. Phys. 28, L1453 (1989).
137. A. Namiki and K. Tanimoto, "XPS Study of the Early Stages of Oxidation of Si(100) by Atomic Oxygen," Surf. Sci. 222, 530 (1989).
138. 2O," J. Electrochem. Soc. 138, L13 (1991).
139. 2O) Processing for Silicon Oxynitride Gate Dielectrics," IBM J. Res. Develop. 43, 287 (1999, this issue).
140. E. Briner, C. Meiner, and A. Rothen, "Recherches sur la Decomposition Thermique du Protoxyde et de l'Oxyde d'Azote," J. Chim. Phys. 23, 609 (1926).
141. NIST Chemical Kinetics Database, 1994.
142. S. Singhvi and C. G. Takoudis, "Growth Kinetics of Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," J. Appl. Phys. 82, 442 (1997).
143. 2 Gas Mixtures," Semiconductor Silicon 1998, R. H. Huff, U. Gosele, and H. Tsuya, Eds., The Electrochemical Society, Pennington, NJ, 1998, p. 745.
144. 2," Surf. Sci. 180, 565 (1987).
145. N. Gonon, A. Gagnaire, D. Barbier, and A. Glachant, "Growth and Structure of Rapid Thermal Silicon Oxides and Nitrides Studied by Spectroellipsometry and Auger Electron Spectroscopy," J. Appl. Phys. 76, 5242 (1994).
146. 2O," J Electrochem. Soc. 142, L34 (1995).
147. K. A. Ellis and R. A. Buhrman, "The Removal of Nitrogen During Boron In-Diffusion in Silicon Gate Oxynitrides," Appl. Phys. Lett. 70, 545 (1997).
148. T. Ito, D. Kitayama, and H. Ikoma, "Silicon Oxynitridation with Inductively Coupled Oxygen Nitrogen Mixed Plasma," Jpn. J. Appl. Phys. 36, 612 (1997).
149. 2," Appl. Phys. Lett. 44, 969 (1984).
150. T. Hori, H. Iwasaki, and K. Tsuji, IEEE Trans. Electron Devices ED-35, 904 (1988).
151. C. Maillot, H. Roulet, and G. Dufour, "Thermal Nitridation of Silicon: An XPS and LEED Investigation,J. Vac. Sci. Technol. B 2, 316 (1984).
152. 4 Thin Films on Si(100): Surface and Interfacial Composition," Phys. Rev. B 47, 15, 622 (1993).
153. 3: LEED and AES Study," Surf. Sci. 331-333, 458 (1995).
154. J. Watanabe and M. Hanabusa, "Photochemical Vapor Deposition of Silicon Oxynitride Films by Deuterium Lamp," J. Mater. Res. 4, 882 (1989).
155. Y. Saito, "Oxynitridation of Silicon by Remote-Plasma Excited Nitrogen and Oxygen," Appl. Phys. Lett. 68, 800 (1996).
156. C. Lin, A. I. Chou, P. Choudhury, J. C. Lee, K. Kumar, B. Doyle, and H. R. Soleimani, "Reliability of Gate Oxide Grown on Nitrogen-Implanted Si Substrates," Appl. Phys. Lett. 69, 3701 (1996).
157. 3 Using ABAB . . . Binary Reaction Sequence Chemistry," Appl. Surf. Sci. 82/83, 460 (1994).
158. T. Suntola, "Atomic Layer Epitaxy," Mater. Sci. Rep. 4, 261 (1989).