Integrated processing of silicon oxynitride films by combined plasma and rapid-thermal processing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3017-3023

  Hattangady, S V ^a   Niimi, H ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITORS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRONIC DENSITY OF STATES; INFRARED SPECTROSCOPY; NITRIDES; OXIDATION; PLASMA APPLICATIONS; SILICON ALLOYS;

CAPACITANCE VOLTAGE TECHNIQUES; ELECTRICAL CHARACTERIZATION; GATE DIELECTRIC THIN FILMS; MIDGAP INTERFACE STATE DENSITY; MOS CAPACITORS; OFFLINE INFRARED SPECTROSCOPY; ONLINE AUGER ELECTRON SPECTROSCOPY; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; PLASMA ASSISTED OXIDATION; SILICON OXYNITRIDE FILMS;

DIELECTRIC FILMS;

EID: 0030289893     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580165     Document Type: Article

References (18)

1. M. M. Moslehi, R. A. Chapman, M. Wong, A. Paranjpe, H. N. Najm, J. Kuehne, R. L. Yeakley, and C. J. Davis, IEEE Trans. Electron Devices 39, 4 (1992).
2. G. Q. Lo, W. C. Ting, D. K. Shih, and D. L. Kwong, Appl. Phys. Lett. 56, 979 (1990).
3. X-L Xu, R. T. Kuehn, J. Wortman, and M. C. Ozturk, Appl. Phys. Lett. 60, 3063 (1992).
4. J. Batey and E. Tierney, J. Appl. Phys. 60, 3136 (1986).
5. T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett. 60, 434 (1992).
6. Y. Okada, P. Tobin, P. Rushbrook, and W. DeHart, IEEE Trans Electron Devices 41, 191 (1994).
7. E. Carr and R. A. Buhrman, Appl. Phys. Lett. 63, 54 (1993).
8. J. Cable, R. A. Mann, and C. S. Woo, IEEE Trans. Electron Device Lett. 12, 128 (1991).
9. G. W. Rubloff, M. Offenberg, and M. Liehr, IEEE Trans. Semicond. Mfg. 7, 96 (1994); M. Offenberg, M. Liehr, and G. W. Rubloff, J. Vac. Sci. Technol. A 9, 1058 (1991).
10. G. W. Rubloff, M. Offenberg, and M. Liehr, IEEE Trans. Semicond. Mfg. 7, 96 (1994); M. Offenberg, M. Liehr, and G. W. Rubloff, J. Vac. Sci. Technol. A 9, 1058 (1991).
11. S. V. Hattangady, V. Misra, T. Yasuda, B. Hornung, X-L Xu, G. Lucovsky, and J. J. Wortman, Proc. 3rd Intl. Symp. Clean. Tech. Semicond. Mfg. 94-7, 288 (1993).
12. S. V. Hattangady, Ph.D. thesis, North Carolina State University, Raleigh (1995).
13. Handbook of Auger Electron Spectroscopy (Perkin Elmer Corp).
14. W. A. Lanford and M. J. Rand, J. Appl. Phys. 49, 2473 (1978).
15. D. V. Tsu and G. Lucovsky, J. Vac. Sci. Technol. A 4, 480 (1986).
16. D. V. Tsu, G. Lucovsky, M. J. Mantini, and S. S. Chao, J. Vac. Sci. Technol. A 5, 1998 (1987).
17. Y. Ma, S. V. Hattangady, T. Yasuda, H. Nimi, S. Gandhi, and G. Lucovsky, Mater. Res. Soc. Symp. Proc. 342, 169 (1994); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).
18. Y. Ma, S. V. Hattangady, T. Yasuda, H. Nimi, S. Gandhi, and G. Lucovsky, Mater. Res. Soc. Symp. Proc. 342, 169 (1994); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).