Hot-camer-induced degradation of N2O-oxynitrided gate oxide NMOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1364-1373

  Matsuoka, Toshimasa ^a   Taguchi, Shigenari ^a   Ohtsuka, Hideki ^a   Taniguchi, Kenji ^a   Hamaguchi, Chihiro ^b   Kakimoto, Seizo ^b   Uda, Kéiichiro ^b  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); HOT CARRIERS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

ELECTRON INJECTION; INTERFACE TRAP; MOLECULAR HYDROGEN DIFFUSION; NITROGEN RICH LAYER;

MOSFET DEVICES;

EID: 0030244380     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535320     Document Type: Article

References (33)

1. E. Suzuki, K. Schroder, and Y. Hayashi, "Carrier conduction in ultrathin nitrided oxide films," J. Appl. Phys., vol. 60, p. 3616, 1986.
2. 2," J. Appl Phys., vol. 63, p. 797, 1988.
3. H. Fukuda, T. Arakawa, and S. Ohno, "Highly reliable thin nitrided SiC>2 films formed by rapid thermal processing in an N2U ambient," Jpn. .J. Appl. Phys., vol. 29, p. L2333, 1990.
4. 2 films in an N2O ambient," in IEDM Tech. Dig., p. 425, 1990.
5. 2O," J. Electrochem. Sac., vol. 138, p. L39, 1991.
6. 2 in pure N2O ambient for ULSIMOS Application," IEEE Electron Device Lett., vol. EDL-13, p. 117, 1992.
7. T. Hori, T. Yasui, and S. Akamatsu, "Hot-carrier effects in MOS-FET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processing," IEEE Trans. Electron Devices, vol. 39, p. 134, 1992.
8. T. Hori, S. Akamatsu, and Y. Odake, "Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing," IEEE Trans. Electron Devices, vol. 39, p. 118, 1992.
9. H. Hwang, M. -Y. Hao, J. Lee, V. Mathews, P. C. Fazan, and C. Dennison, "Furnace N2U oxidation process for submicron MOSFET device applications," Solid State Electron., vol. 36, p. 749, 1993.
10. A. B. Joshi, G. Yoon, J. Kim, G. Q. Lo, and D. -L. Kwong, "Highfield breakdown in thin oxides grown in NaO ambient," IEEE Trans. Electron Devices, vol. 40, p. 1437, 1993.
11. G. W. Yoon, J. Ahn, G. Q. Lo, and D. L. Kwong, "Hot-Carrier related phenomenon in MOSFET's with furnace N2O-nitrided gate oxides," Ext. Abst. 1993 Int. Conf. on Solid State Devices and Materials, Makuhari, Japan, p. 143, 1993.
12. H. S. Momose, T. Morimoto, Y. Ozawa, K. Yamabe. and H. Iwai, "Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration," IEEE Trans. Electron Devices, vol. 41, p. 546, 1994.
13. E. C. Carr and R. A. Buhrman, "Role of interfacial nitrogen in improving thin silicon oxides grown in N2U," Appl. Phys. Lett., vol. 63, p. 54, 1993.
14. T. Y. Chu, W. T. Ting, J. Ahn, and D. L. Kwong, "Thickness and compositional nonuniformities of ultrathin oxides grown by rapid thermal oxidation of silicon in N2U," J. Electruchem. Soc., vol. 138, p. LI3, 1991.
15. P. J. McWhorter and P. S. Winokur, ".Simple technique for separating the effects of interface traps and trapped oxide charge in metal-oxidesemiconductor transistors," Appl. Phys. Lett, vol. 48, p. 133, 1986.
16. G. Groeseneken, H. E. Macs, N. Beltran, and R. F. De Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
17. M. L. Green, D. Brasen, K. W. Evans-Lutterodt, L. C. Feldman, K. Krisch. W. Lennard, H. -T. Tang, L. Manchanda, and M. -T. Tang, "Rapid thermal oxidation of silicon in N2U between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness," Appl. Phys. Lett., vol. 65, p. 848, 1994.
18. T. Y. Chan, P. K. Ko, and C. Hu, "Dependence of channel electric field on device scaling," IEEE Electron Device Lett., vol. EDL-6, p. 551, 1985.
19. S. Tarn, P. K. Ko, and C. Hu, "Lucky-electron model of channel hot electron injection in MOSFET's," IEEE Trans. Electron Devices, vol. ED-31, p. 1116, 1984.
20. T. H. Ning, C. M. Osburn, and H. N. Yu, "Emission probability of hot electrons from silicon into silicon dioxide," J. Appl. Phys., vol. 48, p. 286, 1977.
21. R. Woltjer, G. M. Paulzen, H. G. Pomp, H. Lifka, and P. H. Woerlee, "Three hot-carrier degradation mechanisms in deep-submicron PMOSFET's," IEEE Trans. Electron Devices, vol. ED-42, p. 109, 1995.
22. C. Hu. S. C. Tarn, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terriil, "Hot-electron-induced MOSFET degradation-Model, monitor, and improvement," IEEE Trans. Electron Devices, vol. ED-32, p. 375, 1985.
23. P. Heremaris, R. Bellens, G. Groeseneken, A. v. Schwerin, W. Weber, M. Brox, and H. E. Maes, "The mechanisms of hot-carrier degradation," in Hot Carrier Design Considerations for MOS Devices and. Circuits, C. T. Wang, Ed. New York: Van Nostrand Reinhold, 1992.
24. D. L. Griscom, "Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO-4-on-Si structures," J. Appl. Phys., vol. 58, p. 2524, 1985.
25. D. B. Brown, "The time dependence of interface state production," IEEE Trans. Niicl. Sci., vol. NS-32, p. 3900, 1985.
26. D. Vuillaume, A. Mir, R. Bouchakour, M. Jourdain, A. El-Hdiy, and G. Salace. "Generation of Si-SiC>2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures," J. Appl. Phys., vol. 73, p. 277, 1993.
27. J. Y. Choi, P. K. Ko, and C. Hu, "Effect of oxide field on hotclcciron-induced degradation of metal-oxide-semiconductor field-effect transistor," Appl. Phys. Lett., vol. 50, p. 1188, 1987.
28. 2," J. Appl. Phys., vol. 61, p. 4544, 1987.
29. D. J. DiMaria and J. H. Statliis, "Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon, " J. Appl Phys., vol. 70, p. 1500, 1991.
30. C. C. Chang, A. Kamgar, and D. Kahng, "High-temperature rapid thermal nkridation of silicon dioxide for future VLSI applications," IEEE Electron Device lf.tt., vol. EDL-6, p. 476, 1985.
31. J. S. Cable, R. A. Mann, and J. C. S. Woo, "Impurity barrier properties of reoxidized nitrided oxide films for use v/ith p+-doped polysilicon gates," IEEE Electron Device Lett., vol. 12, p. 128, 1991.
32. D. J. DiMaria and J. W. Stasiak, "Trap creation in silicon dioxide produced by hot electrons," J. Appl Phys., vol. 65, p. 2342, 1989.
33. G. A. Ruggles and J. R. Monkowski, "An investigation of fixed charge buildup in nitrided oxides," J. Electmchem. Soc.., vol. 133, p. 787, 1986.