Structural changes in thin SiO 2 on Si after RIE-like nitrogen plasma action

Applied Surface Science

Volumn 120, Issue 3-4, 1997, Pages 306-316

  Atanassova, E ^a   Paskaleva, A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); NITROGEN; PLASMA ETCHING; RADIATION DAMAGE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE TRANSITION REGION;

SILICA;

EID: 0031381128     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00252-3     Document Type: Article

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