Nitridation impact on thin oxide charge trapping

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 211-214

  Alessandri, M ^a   Clementi, C ^a   Crivelli, B ^a   Ghidini, G ^a   Pellizzer, F ^a   Martin, F ^b   Imai, M ^c   Ikegawa, H ^c  

^a STMICROELECTRONICS   (Italy)

^b CEA GRENOBLE   (France)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL BONDS; ELECTRIC BREAKDOWN OF SOLIDS; NITROGEN OXIDES; OXIDATION; ELECTRIC CHARGE; ELLIPSOMETRY; NITRIDING; OXIDES; THIN FILMS;

CHARGE TRAPPING; NITRIDATION; THIN OXIDES;

THIN FILMS; DIELECTRIC FILMS;

EID: 0031150250     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00050-6     Document Type: Article

References (6)

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6. M.Kuhn, Solid State Electronics 13, pg.873, 1970