The initial oxidation of silicon: New ion scattering results in the ultra-thin regime

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 329-334

  Gusev, E P ^a   Lu, H C ^a   Gustafsson, T ^a   Garfunkel, E ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; SILICA; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ION SCATTERING;

SEMICONDUCTING SILICON;

EID: 0030233513     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00166-3     Document Type: Article

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