Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N2O ambient

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1464-1467

  Koyama, N ^a   Endoh, T ^a   Fukuda, H ^a   Nomura, S ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001667345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360985     Document Type: Article

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