Investigation of boron penetration through thin gate dielectrics including role of nitrogen and fluorine

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2545-2548

  Navi, Mitra ^a,b   Dunham, Scott T ^a,b  

^a Boston University   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIELECTRIC MATERIALS; FLUORINE; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

GATE DIELECTRICS;

SEMICONDUCTING BORON;

EID: 0032121627     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838676     Document Type: Article

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