Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for TV-channel and P-channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 15-22

  Hill, Winford Lee ^a   Vogel, Eric M ^a   Misra, Veena ^a   McLarty, Peter K ^a   Wortman, Jimmie J ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; GASES; HOT CARRIERS; HYDROGEN; MOS DEVICES; NITRIDES; NITROGEN OXIDES; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

IN SITU POLYSILICON DEPOSITION; OXYNITRIDE GATE DIELECTRICS; POST OXIDATION ANNEAL; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SILICON OXYNITRIDE;

MOSFET DEVICES;

EID: 0029774194     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477588     Document Type: Article

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