Reliability of gate oxide grown on nitrogen-implanted Si substrates

Applied Physics Letters

Volumn 69, Issue 24, 1996, Pages 3701-3703

  Lin, Chuan ^a   Chou, Anthony I ^a   Choudhury, Prasenjit ^a   Lee, Jack C ^a   Kumar, Kiran ^b   Doyle, Brian ^c   Soleimani, Hamid R ^d  

^a The University of Texas at Austin   (United States)

^b AGERE SYSTEMS   (United States)

^c INTEL CORPORATION   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001051544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117194     Document Type: Article

References (7)

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2. H. R. Soleimani, B. S. Doyle, and A. Philipossian, J. Electrochem. Soc. 142, L132 (1995).
3. C. T. Liu, Y. Ma, K. P. Cheung, C. P. Chang, L. Fritzinger, J. Becerro, H. Luftman, H. M. Vaida, J. I. Colonell, A. Kamgar, J. F. Mionr, R. G. Muirray, W. Y. C. Lai, C. S. Pai, and S. J. Hillenius, 1996 Symposium on VLSI Technology Digest of Technical Papers, 1996, p. 18.
4. H. Hwang, W. Ting, D. L. Kwong, and J. Lee, IEDM Tech. Dig. 1990, 421 (1990).
5. M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. D. de la Rubia Appl. Phys. Lett. 68, 409 (1996).
6. M. Depas, B. Vermeire, P. W. Mertens, M. Meuris, and M. M. Heyns, Symposium on VLSI Technology Digest of Technical Papers, 1994, p. 23.
7. R. Moazzami and C. Hu, IEDM Tech. Dig. 1992, 139 (1992).