Influence of N2O oxidation of silicon on point defect injection kinetics in the high temperature regime

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2725-2727

  Tsamis, C ^a   Kouvatsos, D N ^a   Tsoukalas, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005830854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117691     Document Type: Article

References (13)

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