Influence of nitrogen profile on electrical characteristics of furnace-or rapid thermally nitrided silicon dioxide films

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7114-7122

  Bouvet, D ^a   Clivaz, P A ^a   Dutoit, M ^a   Coluzza, C ^a   Almeida, J ^a   Margaritondo, G ^a   Pio, F ^b  

^a EPFL   (Switzerland)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 6244250274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361481     Document Type: Article

References (22)

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