Physical models of boron diffusion in ultrathin gate oxides

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 708-717

  Fair, Richard B ^a,b  

^a Duke University   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMS; INTERFACES (MATERIALS); MODELS; MOLECULAR DYNAMICS; NITROGEN; SEMICONDUCTING BORON; SILICA;

BORON DIFFUSION; ULTRATHIN GATE OXIDE;

DIFFUSION;

EID: 0031078539     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837473     Document Type: Article

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