On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

Applied Physics Letters

Volumn 72, Issue 4, 1998, Pages 450-452

  Baumvol, I J R ^a   Gusev, E P ^b   Stedile, F C ^a   Freire Jr , F L ^c   Green, M L ^d   Brasen, D ^d  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b RUTGERS UNIVERSITY   (United States)

^c Departamento de Física   (Brazil)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010115930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120801     Document Type: Article

References (28)

1. J. M. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996).
2. N. S. Saks and R. W. Rendell, IEEE Trans. Nucl. Sci. 39, 2220 (1992).
3. S. M. Myers, J. Appl. Phys. 61, 5428 (1987).
4. K. L. Brower, Phys. Rev. B 42, 3444 (1990).
5. H. Park and C. R. Helms, J. Electrochem. Soc. 139, 2042 (1992).
6. H. Fukuda, T. Ueno, H. Kawarada, and I. Ohdomari, Jpn. J. Appl. Phys., Part 2 32, L569 (1993).
7. 2 Interface - 3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms (The Electrochemical Society, Pennington, NJ, 1996), p. 172.;
8. E. H. Poindexter, C. F. Young, and G. J. Gerardi, Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer, Dordrecht/Boston/London, 1998), p. 397.
9. R. A. B. Devine, J.-L. Autran, W. L. Warren, K. L. Vanheusdan, and J.-C. Rostaing, Appl. Phys. Lett. 70, 2999 (1997).
10. C. G. Van de Valle and W. B. Jackson, Appl. Phys. Lett. 69, 2441 (1996).
11. N. M. Johnson, D. K. Biegelsen, M. D. Moyer, V. R. Deline, and J. C. A. Evans, Appl. Phys. Lett. 38, 995 (1981).
12. 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 177.
13. I. J. R. Baumvol and C. Rolfs, Nucl. Instrum. Methods Phys. Res. B 99, 431 (1995).
14. Q. Qiu, E. Arai, and Y. Ohji, Nucl. Instrum. Methods Phys. Res. B 56/57, 816 (1991).
15. I. J. R. Baumvol, F. C. Stedile, J. J. Ganem, I. Trimaille, and S. Rigo, J. Electrochem. Soc. 143, 1426 (1996).
16. 2 and the Si-SiO2 Interface - 3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms (The Electrochemical Society, Pennington, NJ, 1996), p. 184.
17. Q. Qiu, E. Arai, M. Aratani, M. Yanokura, T. Nozaki, Y. Phji, and R. Imura, Nucl. Instrum. Methods Phys. Res. B 44, 179 (1989).
18. J. F. Shackelford, P. L. Studt, and R. M. Fulrath, J. Appl. Phys. 43, 1619 (1972).
19. J. E. Shelby, J. Appl. Phys. 48, 3387 (1977).
20. A. Stesmans and G. Van Gorp, Appl. Phys. Lett. 57, 2663 (1990).
21. M. Suemitsu, H. Nakazawa, and N. Miyamoto, Appl. Surf. Sci. 82/83, 449 (1994).
22. K. Muraoka, S. Takagi, and A. Toriumi, Extended Abstract of the 1996 International Conference on Solid State Devices and Materials (unpublished), p. 500.
23. W. R. Wampler, S. M. Myers, and D. M. Follstaedt, Phys. Rev. B 48, 4492 (1993).
24. D. L. Griscom, J. Appl. Phys. 58, 2524 (1985).
25. R. A. B. Devine and C. Fiori, J. Appl. Phys. 58, 3368 (1985).
26. A. J. Moulson and J. P. Roberts, Trans. Faraday Soc. 57, 1208 (1961).
27. J. H. Stathis, D. A. Buchanan, D. L. Quinlan, A. H. Parsons, and D. E. Kotecki, Appl. Phys. Lett. 62, 2682 (1993).
28. E. Cartier and D. J. DiMaria, Microelectron. Eng. 22, 207 (1993).